MURT10005

$63.77

Description：DIODE MODULE GP 50V 50A 3TOWER
Series：-

SKU:9ad7e13f1e59 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 50V 50A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：50 V
Current - Average Rectified (Io) (per Diode)：50A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：75 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MURT10005

Overview

The GeneSiC MURT10005 is a silicon super fast recovery rectifier module housed in an electrically isolated three tower package. It supports repetitive peak reverse voltages from 50 V to 200 V and delivers an average forward current of 100 A per package. The device features a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current capability of 1500 A per leg. Electrical characteristics include a maximum reverse recovery time of 75 ns and a thermal resistance of 1.0 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

High surge current capability for robust power handling
Electrically isolated base plate for safety and mounting flexibility
Super fast recovery characteristics with low reverse recovery time

Applications

High frequency switching power supplies
Motor drive freewheeling circuits
DC-DC converter output rectification

Procurement Notes

Verify the specific voltage rating suffix (e.g., 05 for 50V, 10 for 100V) against circuit requirements. Confirm lead orientation as 'R' variants feature reversed leads. Ensure thermal interface material compatibility with the isolated base plate. Validate that the 100A continuous current rating aligns with the system's thermal management design under actual operating conditions.

Selection Notes

Select this component for applications requiring high current density and electrical isolation in a compact form factor. The three tower package allows for efficient heat dissipation through the base plate. Consider the 75 ns reverse recovery time for high-frequency efficiency. Verify that the 1500 A surge rating exceeds potential inrush currents in the target application.

Part Context

This part belongs to the MURT100 series of silicon super fast recovery diode modules. The series offers various voltage ratings while maintaining consistent current and thermal performance profiles across the lineup. The three tower package design is standard for high-power discrete rectifier applications requiring board-level isolation.