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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 50A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURT10010 is a silicon super fast recovery diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 100 V and supports an average forward current of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 75 ns. It operates within a junction temperature range of -55 to 150 °C, with a thermal resistance from junction to case of 1.0 °C/W per leg.
Feature Summary
- Features a three-tower package design offering high surge capability
- Includes an electrically isolated base plate for mounting flexibility
- Provides super fast recovery characteristics suitable for high-frequency applications
Applications
- High frequency switching power supplies
- Inverter circuits
- DC-DC converters
Procurement Notes
Verify the specific datasheet version and electrical parameters against the manufacturer's official documentation before integration. Confirm that the component meets all required thermal and electrical specifications for the intended application environment. Ensure proper handling procedures are followed during installation to maintain device integrity.
Selection Notes
Select this component based on its 100 V reverse voltage rating and 100 A average forward current capacity. Consider the 75 ns reverse recovery time for high-speed switching requirements. Evaluate the thermal management needs relative to the 1.0 °C/W junction-to-case thermal resistance to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the MURT100 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings ranging from 50 V to 200 V. All models in this family share the same three-tower package structure and similar electrical performance characteristics, differing primarily in their blocking voltage capabilities.
Replacement Considerations
Compatible substitutes include other MURT100 series modules such as MURT10005 or MURT10020, provided the voltage ratings align with the circuit requirements. Verify that any replacement maintains the same package dimensions and terminal configuration for mechanical compatibility.
