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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 50A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC MURT10020R is a silicon super fast recovery diode module featuring a three tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage of 200 V and delivers an average forward current of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 75 ns. It withstands a peak forward surge current of 1500 A and operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- High surge capability for robust performance under transient conditions
- Electrically isolated base plate for enhanced safety and thermal management
- Three tower package design for efficient mounting and integration
Applications
- High frequency switching power supplies
- DC-DC converter circuits
- Induction heating systems
Procurement Notes
Verify the specific part number against official datasheets to confirm electrical ratings and pinout configuration. Ensure the component meets required thermal resistance specifications for the intended application environment. Confirm compliance with relevant industry standards before finalizing procurement decisions.
Selection Notes
Select this component based on its 200 V reverse voltage rating and 100 A current capacity. Consider the 75 ns reverse recovery time for high-speed switching applications. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation in the target system design.
Part Context
This component belongs to the MURT100 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V, providing flexibility for different power electronics applications requiring fast recovery characteristics.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current capacity, and recovery times when evaluating alternative components.
