MURT20010

MURT20010

$74.06
  • Description:DIODE MODULE GP 100V 100A 3TOWER
  • Series:-

SKU:8de2c2231f4d Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 100V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT20010

Overview

The GeneSiC Semiconductor MURT20010 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 200 A per package. It features a three-tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V at 25°C, a maximum reverse recovery time of 75 ns, and a thermal resistance from junction to case of 0.45 °C/W per leg. The device supports an operating temperature range from -55°C to 150°C and can withstand a peak forward surge current of 2000 A.

Feature Summary

  • High surge capability designed for demanding transient loads
  • Three tower package structure providing compact integration
  • Electrically isolated base plate for enhanced safety and mounting flexibility

Applications

  • High frequency power conversion circuits
  • Isolated DC-DC converter topologies
  • Induction heating systems requiring fast recovery characteristics

Procurement Notes

Verify the specific suffix designation against the datasheet to confirm terminal configuration, as 'R' variants feature reversed leads. Ensure the selected part matches the required voltage rating of 100 V and current capacity of 200 A. Confirm thermal management requirements align with the specified junction-to-case thermal resistance for your application environment.

Selection Notes

Select this component when high-speed switching and electrical isolation are critical. The 75 ns reverse recovery time makes it suitable for applications where minimizing switching losses is essential. Consider the three-tower package geometry for board space constraints and verify that the 100 V reverse voltage rating provides adequate margin for your circuit's peak inverse voltage conditions.

Part Context

This module belongs to the MURT20005 through MURT20020R series of silicon super fast recovery diodes. The series offers varying voltage ratings from 50 V to 200 V while maintaining a consistent 200 A current handling capability. The MURT20010 specifically targets the 100 V segment of this lineup, sharing identical thermal and physical characteristics with its siblings.

Replacement Considerations

Direct replacements must match the 100 V rating, 200 A current capacity, and 75 ns recovery time. Verify pinout compatibility, particularly regarding the standard versus reversed lead configurations found in the 'R' suffix variants. Ensure the replacement package maintains the same thermal resistance and isolation requirements.

MURT20010MURT20010
$74.06
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