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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT20010R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three tower package with an electrically isolated base plate and reversed leads. The device supports a repetitive peak reverse voltage of 100 V and an average forward current of 200 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a maximum reverse recovery time of 75 ns, and a peak forward surge current of 2000 A per leg. The junction-to-case thermal resistance is 0.45 °C/W, and the operating temperature range spans from -55 °C to +150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Electrically isolated base plate within a three tower package structure
- Super fast recovery characteristics suitable for high-frequency switching
Applications
- High frequency DC-DC converters
- Free-wheeling rectification in motor drives
- Induction heating systems
Procurement Notes
Verify the specific part number suffix against official datasheets to confirm lead configuration and voltage ratings. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load conditions.
Selection Notes
Select this component when high current handling and fast switching speeds are required in isolated power modules. The three tower package facilitates efficient mounting and heat dissipation. Consider the 100 V reverse voltage rating and 200 A current capacity to ensure adequate margins for the target circuit design requirements.
Part Context
This component belongs to the MURT200 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current and thermal performance characteristics across the lineup.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic replacements may differ in thermal resistance or recovery time specifications.
