MURT20020

Overview

The GeneSiC Semiconductor MURT20020 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It features a maximum instantaneous forward voltage of 1.0 V at 25 °C and a maximum reverse recovery time of 75 ns. The device operates within a junction temperature range of -55 °C to +150 °C, with a thermal resistance from junction to case of 0.45 °C/W per leg.

Feature Summary

• High surge capability supporting significant transient current loads
• Three tower package design providing electrical isolation via an isolated base plate
• Not sensitive to electrostatic discharge

Applications

• High frequency power conversion circuits
• Isolated DC-DC converter topologies
• Industrial motor drive systems

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the terminal configuration matches the intended circuit layout, as suffixes may indicate reversed leads. Ensure the operating environment remains within the specified thermal limits to maintain reliability.

Selection Notes

Select this component when a 200 A rating and 200 V blocking voltage are required in an isolated package. Consider the 75 ns reverse recovery time for high-frequency switching applications. Evaluate the thermal management requirements based on the 0.45 °C/W junction-to-case resistance.

Part Context

This module belongs to the MURT200 series, which includes variants ranging from 50 V to 200 V reverse voltage ratings. All members share the same 200 A current capacity and three tower physical form factor, differing primarily in their voltage specifications and potential lead configurations.

Replacement Considerations

Cross-reference with other MURT200 series parts like MURT20010 or MURT20005 if lower voltage ratings are acceptable. Verify pinout compatibility, particularly regarding the reversed lead configuration indicated by the 'R' suffix in related part numbers.