MURT20020R

Overview

The GeneSiC Semiconductor MURT20020R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It features a three tower isolation type package with an electrically isolated base plate. The device exhibits a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 2000 A per leg, and a maximum reverse recovery time of 75 ns. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• High surge capability
• Three tower package design
• Electrically isolated base plate

Applications

• Industrial power conversion systems
• DC-DC converters
• Inverter circuits

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through authorized distributors or manufacturer channels prior to procurement. Ensure thermal management solutions align with the specified junction-to-case thermal resistance requirements for reliable operation.

Selection Notes

Select this component for applications requiring high surge current handling and fast recovery characteristics within a thermally efficient isolated package. Evaluate the 200 A continuous current rating against system load profiles. Consider the 75 ns reverse recovery time for high-frequency switching applications where low switching losses are critical.

Part Context

This part belongs to the MURT200 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V in a standardized three tower package format. These modules are designed for robust performance in demanding power electronics environments.

Replacement Considerations

MURT20020