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Product Detailed Parameters
- Description：DIODE MODULE GP 400V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.35 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT20040 is a silicon super fast recovery diode module from the GeneSiC Semiconductor MURT series. It features a three-tower package with an electrically isolated base plate and is not ESD sensitive. Key electrical parameters include a repetitive peak reverse voltage (VRRM) of 400 V, an average forward current (IF(AV)) of 200 A per package, and a peak forward surge current (IFSM) of 2000 A per leg. The maximum instantaneous forward voltage is 1.7 V at 100 A, while the maximum reverse recovery time is 90 ns. Thermal resistance from junction to case is 0.45 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability with a three-tower package design
- Electrically isolated base plate for enhanced safety
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High-power DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive circuits
Procurement Notes
Verify the specific datasheet version and manufacturer documentation before procurement. Confirm that the component matches the required voltage and current ratings for your application. Check for any specific handling requirements despite the non-ESD sensitive designation. Ensure compatibility with your thermal management system given the specified thermal resistance values.
Selection Notes
Select this component when high current capacity and fast switching speeds are required in a compact, isolated package. Consider the 400 V rating and 200 A continuous current capability against your circuit demands. Evaluate the thermal performance based on the junction-to-case resistance and expected operating temperatures. Compare with other modules in the MURT series if higher voltage ratings like 600 V are needed.
Part Context
The MURT20040 belongs to the MURT series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. This series is designed for high-performance power conversion applications requiring robust surge handling and efficient heat dissipation through an isolated base plate structure.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic replacements may not match the specific thermal or electrical characteristics of the original component.
FAQ
Is the MURT20040 sensitive to electrostatic discharge?
No, the MURT20040 is explicitly stated as not being ESD sensitive.
What is the maximum reverse recovery time for this module?
The maximum reverse recovery time (Trr) is 90 ns per leg.
Can the MURT20040 operate at temperatures above 150 °C?
No, the maximum operating and storage temperature is limited to 150 °C.
