MURT20060

$74.06

Description：DIODE MODULE GP 600V 100A 3TOWER
Series：-

SKU:f9d289f2337b Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 600V 100A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io) (per Diode)：100A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：160 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MURT20060

Overview

The GeneSiC Semiconductor MURT20060 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 200 A. It utilizes a three tower package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 1.7 V at 100 A, a maximum reverse recovery time of 110 ns, and a thermal resistance from junction to case of 0.45 °C/W per leg.

Feature Summary

High surge capability designed for demanding power applications
Electrically isolated base plate for enhanced safety and mounting flexibility
Super fast recovery technology for efficient switching performance

Applications

High frequency inverters
DC-DC converters
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific datasheet version and terminal configuration markings on the component body before integration. Confirm that the selected variant matches the required voltage rating within the 400 V to 600 V range. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load conditions.

Selection Notes

Select this module when high current handling and fast switching speeds are required in isolated power conversion systems. The three tower package allows for flexible circuit board layout and robust mechanical mounting. Consider the thermal resistance specifications when designing heat sinking solutions to maintain junction temperatures within the specified operating range during continuous operation.

Part Context

This component belongs to the MURT series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 400 V to 600 V, all sharing similar current capabilities and package styles. These modules are engineered for high-performance rectification in industrial and commercial power electronics applications requiring reliability and efficiency.