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Product Detailed Parameters
- Description：DIODE MODULE GP 50V 150A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 150 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：100 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURT30005 is a silicon super fast recovery rectifier diode module housed in an electrically isolated three tower package. It supports a repetitive peak reverse voltage of 50 V and delivers an average forward current of 300 A per package. The device features a maximum instantaneous forward voltage of 1.0 V at 150 A and a peak forward surge current capability of 2750 A. Its thermal resistance from junction to case is 0.40 °C/W, with an operating temperature range spanning -55 °C to 150 °C.
Feature Summary
- High surge current capability for robust transient handling
- Electrically isolated base plate for safety and mounting flexibility
- Three tower package design for efficient heat dissipation
Applications
- Industrial power conversion systems
- Electrical drive inverters
- High-power DC-DC converters
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against the official GeneSiC documentation before integration. Confirm that the 50 V rating aligns with the system's peak reverse voltage requirements. Ensure the thermal management solution accommodates the specified junction-to-case thermal resistance to maintain safe operating temperatures under load.
Selection Notes
Select this component when high average current capacity and fast recovery characteristics are required in an isolated module form factor. Evaluate the 50 V reverse voltage limit against circuit transients. Consider the three tower package dimensions for mechanical fit and verify that the thermal interface material matches the specified junction-to-case thermal resistance for optimal performance.
Part Context
This part belongs to the MURT300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings up to 200 V, all sharing the same 300 A current capacity and three tower package structure. These modules are designed for high-power applications requiring reliable switching performance and electrical isolation.
Replacement Considerations
MURT30005R serves as a variant within the same family with reversed leads. Cross-referencing with other manufacturers' 300 A, 50 V super fast recovery modules requires verification of pinout compatibility and thermal resistance specifications.
