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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 150A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 150 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：100 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURT30010 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 300 A per package. It features a three tower isolation type package with an electrically isolated base plate. The device supports an operating temperature range from -55 °C to +150 °C, with a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current of 2750 A per leg.
Feature Summary
- High surge capability
- Electrically isolated base plate
- Three tower package design
Applications
- Industrial power conversion systems
- High current rectification circuits
- Isolated power supply designs
Procurement Notes
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm current availability status as product lifecycle stages may affect procurement channels. Ensure thermal management solutions align with the specified junction-to-case thermal resistance requirements for reliable operation.
Selection Notes
Select this component when high surge current handling and electrical isolation are required in a compact form factor. The three tower package facilitates efficient mounting and heat dissipation. Verify that the 100 V reverse voltage rating meets the circuit's peak inverse voltage demands under all operating conditions.
Part Context
This module belongs to the MURT300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current capabilities. These modules are designed for robust performance in demanding power electronics applications requiring high reliability.
Replacement Considerations
MURT30005R
FAQ
What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 0.40 °C/W per leg.
Is the device sensitive to electrostatic discharge?
No, the device is not ESD sensitive.
What is the maximum reverse recovery time?
The maximum reverse recovery time is 100 ns per leg.
