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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 150A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 150 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：100 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURT30010R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 300 A per package. It features a three-tower isolation type package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 2750 A per leg, and a maximum reverse recovery time of 100 ns. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- High surge capability with a peak forward surge current rating of 2750 A per leg
- Three tower package design providing an electrically isolated base plate
- Super fast recovery performance with a maximum reverse recovery time of 100 ns
Applications
- High frequency power conversion circuits requiring fast switching
- Industrial motor drive systems utilizing high current rectification
- DC-DC converter modules needing isolated thermal management
Procurement Notes
Verify the specific part number suffix against official documentation to confirm lead configuration details. Ensure that the procurement specifications align with the required thermal resistance and mounting torque values for the three-tower package. Confirm compliance with RoHS directives and check for any discontinuation notices prior to finalizing orders.
Selection Notes
Select this component when designing circuits requiring high average forward current capacity alongside rapid reverse recovery characteristics. The electrically isolated base plate facilitates efficient heat dissipation and simplifies grounding strategies in high-voltage applications. Evaluate the thermal resistance parameters to ensure adequate cooling solutions are implemented for sustained operation at elevated temperatures.
Part Context
This module belongs to the MURT300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 50 V to 200 V while maintaining consistent current handling capabilities. These components are engineered for robust performance in demanding power electronics environments.
Replacement Considerations
MURT30005R
FAQ
What is the maximum reverse recovery time for the MURT30010R?
The maximum reverse recovery time is 100 ns.
Does the MURT30010R feature an electrically isolated base plate?
Yes, the three-tower package includes an electrically isolated base plate.
What is the peak forward surge current rating per leg?
The peak forward surge current is 2750 A per leg.
