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The GeneSiC Semiconductor MURT30020R is a silicon super fast recovery diode module featuring a three tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 200 V and an average forward current of 300 A per package. The device exhibits a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 100 ns. It supports a peak forward surge current of 2750 A and operates within a junction temperature range of -55°C to +150°C.
Verify the specific part number suffix against official documentation, as the 'R' designation indicates reversed leads compared to standard variants. Confirm that the component is sourced from authorized channels to ensure authenticity and compliance with RoHS standards. Check for recent discontinuation notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.
Select this module when high current handling and fast switching speeds are required in isolated power architectures. Ensure the thermal design accommodates the specified junction-to-case thermal resistance. Verify that the system voltage does not exceed the 200 V rating and that the mechanical layout supports the three tower screw-mount configuration.
This component belongs to the MURT300 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 300 A current capacity. The three tower package design distinguishes it from twin tower alternatives, providing specific isolation and mounting characteristics suitable for high-power density applications.
Direct replacements must match the 200 V reverse voltage, 300 A current rating, and three tower package form factor. Verify lead orientation compatibility, as the 'R' suffix denotes reversed leads. Ensure equivalent thermal resistance and reverse recovery time specifications are met by any substitute component.