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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 150A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 150 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：200 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT30060 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 600 V and an average forward current of 300 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.70 V at 150 A, a peak forward surge current of 2750 A, and a maximum reverse recovery time of 150 ns. Thermal resistance from junction to case is 0.40 °C/W per leg.
Feature Summary
- High surge capability designed for demanding power applications
- Electrically isolated base plate within the three-tower package structure
- Not sensitive to electrostatic discharge
Applications
- High frequency switching power supplies
- Motor drive circuits
- DC-DC converters
Procurement Notes
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm that the component meets all required thermal management specifications for the intended operating environment. Ensure compatibility with existing mounting hardware due to the specific three-tower package dimensions.
Selection Notes
Select this module when high current handling and fast recovery times are critical. The 600 V rating suits medium-voltage applications. Consider the 0.40 °C/W thermal resistance for heat sink design. Verify that the 150 ns reverse recovery time aligns with the switching frequency requirements of the target circuit topology.
Part Context
This component belongs to the MURT300 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings, such as the MURT30040. These modules are characterized by their robust construction and isolation capabilities, suitable for industrial power electronics where reliability under high stress conditions is required.
Replacement Considerations
MURT30040R
FAQ
What is the maximum reverse recovery time for the MURT30060?
The maximum reverse recovery time is 150 ns.
Is the base plate electrically isolated in the MURT30060 package?
Yes, the three-tower package features an electrically isolated base plate.
What is the peak forward surge current rating per leg?
The peak forward surge current is 2750 A.
