MURT30060R

MURT30060R

$83.93
  • Description:DIODE MODULE GP 600V 150A 3TOWER
  • Series:-

SKU:fec0214bb93c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 150A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 150 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):200 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT30060R

Overview

The MURT30060R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and operates within a junction temperature range of -55 to +150 °C. The device supports a repetitive peak reverse voltage (VRRM) of 600 V, an average forward current (IF(AV)) of 300 A per package, and a peak forward surge current (IFSM) of 2750 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.70 V at 150 A, a maximum reverse recovery time of 150 ns, and a thermal resistance from junction to case of 0.40 °C/W.

Feature Summary

  • High surge capability with a peak forward surge current rating of 2750 A per leg
  • Electrically isolated base plate for enhanced safety in high-voltage applications
  • Three-tower package design providing robust mechanical structure

Applications

  • High-frequency power conversion circuits
  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific part number suffix against official datasheets to confirm terminal configuration, as 'R' variants may have reversed leads. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance to maintain safe operating temperatures under rated load conditions.

Selection Notes

Select this component for applications requiring high current handling and fast switching speeds. The 600 V rating suits medium-voltage AC-DC conversion. Evaluate thermal constraints carefully due to the 0.40 °C/W junction-to-case resistance. Compare against lower voltage variants if system requirements allow, ensuring the selected model meets both voltage and current demands without exceeding thermal limits.

Part Context

This component belongs to the MURT300 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes models ranging from 400 V to 600 V reverse voltage ratings. All variants share the same three-tower package form factor and similar thermal characteristics, differing primarily in their voltage blocking capabilities and specific electrical parameters defined in the datasheet.

Replacement Considerations

Direct substitutes within the same series include MURT30040R and MURT30050R, provided voltage ratings are sufficient. Verify lead orientation differences between standard and 'R' suffix packages during replacement to ensure correct circuit connectivity.

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