MURT40005

Overview

The GeneSiC MURT40005 is a silicon super fast recovery rectifier housed in an electrically isolated three tower package. It supports repetitive peak reverse voltages from 50 V to 200 V and delivers an average forward current of 400 A per package. The device features a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A, and a maximum reverse recovery time of 150 ns. Operating temperatures range from -55 °C to 150 °C with a junction-to-case thermal resistance of 0.35 °C/W.

Feature Summary

• High surge capability
• Electrically isolated base plate
• Three tower package design

Applications

• High power rectification
• Super fast recovery circuits

Procurement Notes

Verify the specific voltage rating suffix (e.g., 05 for 50V) against the required circuit blocking voltage. Confirm the 'R' designation if reversed leads are needed. Ensure the application environment stays within the specified -55 °C to 150 °C operating temperature range. Check datasheet details for exact terminal configurations and mounting requirements before ordering.

Selection Notes

Select this component for applications requiring high average current handling and fast switching speeds. The isolated package simplifies thermal management and electrical isolation needs. Compare the 150 ns reverse recovery time against system switching frequencies to ensure adequate performance. Verify that the 0.35 °C/W thermal resistance meets the heat dissipation requirements of the target installation.

Part Context

This part belongs to the MURT series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series utilizes a three tower package architecture designed for high power density. Variants within the family differ primarily in their voltage ratings while maintaining similar current and thermal characteristics.

Replacement Considerations

MURT40005R serves as a variant with reversed leads.