MURT40010R

Overview

The GeneSiC Semiconductor MURT40010R is a silicon super fast recovery diode module designed for high-power applications. It features a three-tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 100 V and delivers an average forward current of 400 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 150 ns. The thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

• High surge capability with a peak forward surge current of 3300 A per leg
• Electrically isolated base plate within a three-tower package configuration
• Super fast recovery characteristics with a maximum reverse recovery time of 150 ns

Applications

• High-frequency power conversion systems
• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• DC-DC converters requiring high surge tolerance

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal lead orientation, as the datasheet indicates that devices with the 'R' suffix have reversed leads compared to standard configurations. Confirm compliance with RoHS directives and ensure the sourcing channel provides valid traceability for industrial-grade components. Cross-reference the part number with the manufacturer's latest discontinuation notices to avoid obsolete stock.

Selection Notes

Select this component when designing circuits requiring high current handling capacity alongside rapid switching speeds. The low thermal resistance facilitates efficient heat dissipation in compact assemblies. Ensure the application voltage does not exceed the 100 V rating and verify that the cooling solution can maintain the junction temperature within the specified -55 °C to +150 °C range under full load conditions.

Part Context

This module belongs to the MURT400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current and thermal performance across the lineup. These modules are engineered for robustness in demanding power electronics environments, utilizing a standardized three-tower package for versatile mounting options.

Replacement Considerations

Direct replacements must match the 100 V reverse voltage, 400 A current rating, and 150 ns reverse recovery time. Verify pinout compatibility, particularly regarding lead orientation if substituting with non-R variants. Check thermal resistance values to ensure equivalent heat dissipation capabilities in the existing design.