MURT40020

$93.61

Description：DIODE MODULE GP 200V 200A 3TOWER
Series：-

SKU:c58f734884a1 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 200V 200A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：200 V
Current - Average Rectified (Io) (per Diode)：200A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 200 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：125 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MURT40020

Overview

The GeneSiC Semiconductor MURT40020 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 400 A per package. It features a three tower isolation type package with an electrically isolated base plate. The device supports a junction temperature range from -55 °C to +150 °C, exhibits a maximum instantaneous forward voltage of 1.0 V at 25 °C, and has a maximum reverse recovery time of 150 ns.

Feature Summary

High surge capability with a peak forward surge current rating of 3300 A per leg
Electrically isolated base plate within the three tower package design
Not sensitive to electrostatic discharge

Applications

Industrial power conversion systems
High frequency inverter circuits
DC-DC converter modules

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates that devices with an 'R' suffix have reversed leads compared to standard configurations. Confirm the exact voltage rating matches the application requirements, as the series spans multiple voltage levels. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values during operation.

Selection Notes

Select this component for applications requiring high current handling and fast switching speeds within a low voltage range. The three tower package facilitates efficient heat dissipation and electrical isolation. Consider the 150 ns reverse recovery time for compatibility with high-frequency switching topologies. Verify mechanical mounting constraints align with the three tower terminal configuration.

Part Context

This component belongs to the MURT40005 through MURT40020R series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers varying voltage ratings from 50 V to 200 V while maintaining a consistent 400 A average forward current rating across all variants.