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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 200 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：240 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT40060R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three tower package with an electrically isolated base plate and operates within a junction temperature range of -55 to 150 °C. The device supports a repetitive peak reverse voltage (VRRM) of 600 V, an average forward current (IF(AV)) of 400 A per package, and a peak forward surge current (IFSM) of 3300 A per leg. Electrical characteristics include a maximum instantaneous forward voltage of 1.70 V at 200 A, a maximum reverse recovery time of 240 ns, and a thermal resistance from junction to case of 0.35 °C/W.
Feature Summary
- High surge capability designed for demanding power applications
- Electrically isolated base plate for enhanced safety and mounting flexibility
- Three tower package configuration providing robust mechanical structure
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific part number suffix against official datasheets to confirm voltage ratings and lead configurations. Confirm that the component matches the required electrical isolation standards and thermal management specifications for the target application environment before procurement.
Selection Notes
Select this component based on its 600 V blocking voltage and 400 A continuous current capacity. Ensure the system design accommodates the 0.35 °C/W thermal resistance and utilizes appropriate heat sinking to maintain junction temperatures within the specified operating range during high surge events.
Part Context
This component belongs to the MURT400 series of silicon super fast recovery diodes produced by GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 400 V to 600 V, all sharing the same three tower package format and high surge current capabilities for industrial power electronics.
Replacement Considerations
Compatible substitutes include other models within the MURT400 series, such as the MURT40040R or MURT40050R, provided their voltage ratings meet the circuit requirements. Verify pinout compatibility due to potential lead reversals in 'R' devices.
