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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURTA20020 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It features a heavy three tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V at Tj = 125 °C, a peak forward surge current of 2000 A per leg, and a maximum reverse recovery time of 100 ns. The device operates within a junction temperature range of -55 to 150 °C.
Feature Summary
- Heavy three tower package design providing high surge capability
- Electrically isolated base plate for safety and thermal management
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High frequency switching power supplies
- Inverter circuits in motor drives
- DC-DC converter topologies requiring fast recovery
Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the procurement channel provides valid traceability for the component's manufacturing origin. Confirm compliance with relevant environmental standards prior to integration into final assemblies.
Selection Notes
Select this component based on its 200 V blocking voltage and 200 A current rating requirements. Evaluate the thermal resistance of 0.45 °C/W per leg to ensure adequate heat sinking solutions are implemented. Consider the 100 ns reverse recovery time when designing snubber circuits or assessing switching losses in the target application environment.
Part Context
This module belongs to the MURTA series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings up to 400 V, sharing similar packaging and performance characteristics. These modules are designed for robust industrial and commercial power electronics applications.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 200 V VRRM, 200 A IF(AV), and Three Tower package dimensions.
