MURTA20040R

Overview

The GeneSiC Semiconductor MURTA20040R is a silicon super fast recovery diode module featuring a heavy three tower package. It provides an average forward current of 200 A and supports repetitive peak reverse voltages up to 400 V. The device includes two elements in a common anode configuration with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 2000 A per leg, and a maximum reverse recovery time of 100 ns. Thermal resistance from junction to case is rated at 0.45 °C/W per leg.

Feature Summary

• High surge capability designed for demanding power applications
• Electrically isolated base plate for enhanced safety and mounting flexibility
• Heavy three tower package construction for robust mechanical stability

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• DC-DC converters

Procurement Notes

Verify the specific datasheet version and manufacturer documentation before integration. Confirm that the terminal configuration matches the design requirements, as 'R' suffix devices feature reversed leads. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load.

Selection Notes

Select this component when high-speed switching and robust surge handling are required in medium-power circuits. The common anode configuration simplifies circuit topology for specific rectifier arrangements. Evaluate the 400 V rating against system voltage peaks to ensure adequate margin. Consider the physical dimensions of the three tower package for PCB or chassis layout constraints.

Part Context

This part belongs to the MURTA200 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 200 V to 400 V while maintaining consistent current handling capabilities. These modules are engineered for general-purpose rectification where fast recovery characteristics improve efficiency and reduce switching losses compared to standard recovery diodes.

Replacement Considerations

Direct replacements must match the 200 A current rating, 400 V reverse voltage, and common anode configuration. Verify that substitute components offer comparable reverse recovery times and thermal resistance. Physical compatibility with the three tower package footprint is essential for direct interchangeability without redesigning the mounting structure.