MURTA30060

Overview

The GeneSiC Semiconductor MURTA30060 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 300 A per package. It features a heavy three tower isolation type package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 1.7 V, a peak forward surge current of 2750 A per leg, and a maximum reverse recovery time of 150 ns. The device operates within a junction temperature range of -55 to 150 °C and exhibits a thermal resistance from junction to case of 0.40 °C/W.

Feature Summary

• High surge capability supported by a heavy three tower package design
• Electrically isolated base plate providing safety isolation
• Not sensitive to electrostatic discharge (ESD)

Applications

• Industrial power conversion systems
• Inverter circuits requiring high surge tolerance
• General purpose rectification in high current applications

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates that devices marked with 'R' have reversed leads compared to the standard configuration. Confirm the terminal orientation matches the circuit board layout before installation. Ensure the supplier provides documentation confirming the component originates from GeneSiC Semiconductor or its authorized successor entities to guarantee authenticity and compliance with the specified electrical parameters.

Selection Notes

Select this component for applications requiring robust performance under high surge conditions and reliable operation at elevated temperatures up to 150 °C. The electrically isolated base plate simplifies heatsinking strategies by eliminating the need for additional insulating hardware. Consider the 150 ns reverse recovery time when designing for switching frequencies where soft recovery characteristics are beneficial to minimize electromagnetic interference and switching losses.

Part Context

This part belongs to the MURTA300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series spans voltage ratings from 600 V to 1200 V, sharing common mechanical dimensions and thermal characteristics. The MURTA30060 specifically addresses the 600 V segment of this lineup, offering identical packaging and current handling capabilities as higher voltage variants within the same family.

Replacement Considerations

Direct replacements must match the 600 V rating, 300 A current capacity, and three tower isolation package form factor. Verify lead polarity if substituting with an 'R' suffix variant, as the pinout differs. Ensure the replacement maintains the 0.40 °C/W thermal resistance and 150 ns recovery time to preserve system performance.