MURTA30060R

MURTA30060R

$113.34
  • Description:DIODE MODULE GP 600V 150A 3TOWER
  • Series:-

SKU:41131b6ca41e Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 150A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 150 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA30060R

Overview

The MURTA30060R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 600 V and an average forward current of 300 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.7 V, a peak forward surge current of 2750 A per leg, and a maximum reverse recovery time of 150 ns. The junction-to-case thermal resistance is 0.40 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • High surge capability provided by the heavy three tower package design
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Not ESD sensitive for improved handling reliability

Applications

  • High frequency switching power supplies
  • Induction heating systems
  • Uninterruptible power supply (UPS) circuits

Procurement Notes

Verify the specific datasheet version and manufacturer documentation before procurement. Confirm that the component matches the required 600V rating and 300A current specifications. Ensure the installation environment accommodates the specified operating temperature range and thermal management requirements. Check for any regional shipping restrictions or export control documentation needs associated with this semiconductor product.

Selection Notes

Select this component when high surge capability and fast recovery are critical for the application. The isolated base plate allows for direct mounting to heatsinks without additional insulators. Consider the 0.40 °C/W thermal resistance for heat sink sizing calculations. Verify that the 150 ns reverse recovery time meets the switching frequency requirements of the circuit design.

Part Context

This part belongs to the MURTA300 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 600 V to 1200 V. All parts in this series share the same heavy three tower package and common electrical characteristics regarding current capacity and thermal performance.

Replacement Considerations

Direct substitutes within the same series include MURTA30080R and MURTA300100R for higher voltage applications. For lower voltage requirements, MURTA30040R may be considered if compatible with the system voltage. Ensure any replacement maintains the same package type and thermal resistance characteristics.

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