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The MURTA40020 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 200 V and an average forward current of 400 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A, and a maximum reverse recovery time of 150 ns. The junction-to-case thermal resistance is 0.35 °C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific voltage rating required, as the datasheet indicates availability across a range including 200 V and 400 V options within the MURTA400 series. Confirm terminal configuration details, noting that devices marked with an 'R' suffix have reversed leads compared to standard versions. Ensure compatibility with the intended thermal management solution given the specified thermal resistance values.
Select this component when high average current handling and fast switching speeds are required in a robust, isolated package. The 200 V rating suits lower voltage DC bus applications. Consider the 150 ns reverse recovery time for efficiency in hard-switching topologies. Verify that the system can accommodate the physical dimensions of the three tower package and the associated mounting hardware requirements.
This part belongs to the MURTA400 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 200 V to 400 V while maintaining a consistent 400 A average forward current capability. These modules are designed for industrial applications requiring reliable performance under high stress conditions.
Direct substitutes within the same family include the MURTA40040 for higher voltage ratings. When replacing, verify lead orientation differences between standard and 'R' suffix variants to ensure correct circuit connectivity.