MURTA40020R

MURTA40020R

$113.34
  • Description:DIODE MODULE GP 200V 200A 3TOWER
  • Series:-

SKU:054d135e5640 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE MODULE GP 200V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Download product information

MURTA40020R

Overview

The MURTA40020R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 200 V, an RMS reverse voltage of 141 V, and a DC blocking voltage of 200 V. It provides an average forward current of 400 A per package and a peak forward surge current of 3300 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.3 V at 200 A, a maximum reverse recovery time of 150 ns, and a junction-to-case thermal resistance of 0.35 °C/W.

Feature Summary

  • Heavy three tower package design for high surge capability
  • Electrically isolated base plate for safety and mounting flexibility
  • Super fast recovery silicon technology for efficient switching

Applications

  • High frequency power conversion circuits
  • Industrial motor drives and inverters
  • DC-DC converter output rectification

Procurement Notes

Verify the specific part number against official GeneSiC Semiconductor documentation to confirm the 'R' suffix indicates reversed leads as stated in the datasheet. Ensure the procurement specifications match the required 200 V rating and 400 A current capacity. Confirm that the supplier provides the original datasheet for thermal and electrical parameter validation before finalizing orders.

Selection Notes

Select this component when a robust, isolated diode module is required for high-current applications. The 150 ns recovery time suits super fast recovery needs. Verify that the system can accommodate the heavy three tower package dimensions and screw mount requirements. Ensure the operating temperature range of -55°C to 150°C aligns with the application environment.

Part Context

This module belongs to the MURTA400 series from GeneSiC Semiconductor, designed for high-power industrial applications. The series utilizes silicon super fast recovery technology within an isolated three tower package. The 'R' variant specifically denotes reversed lead configuration compared to standard versions, requiring careful attention during circuit board layout and assembly planning.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

MURTA40020RMURTA40020R
$113.34
Buy Now