SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MURTA40020R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 200 V, an RMS reverse voltage of 141 V, and a DC blocking voltage of 200 V. It provides an average forward current of 400 A per package and a peak forward surge current of 3300 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.3 V at 200 A, a maximum reverse recovery time of 150 ns, and a junction-to-case thermal resistance of 0.35 °C/W.
Verify the specific part number against official GeneSiC Semiconductor documentation to confirm the 'R' suffix indicates reversed leads as stated in the datasheet. Ensure the procurement specifications match the required 200 V rating and 400 A current capacity. Confirm that the supplier provides the original datasheet for thermal and electrical parameter validation before finalizing orders.
Select this component when a robust, isolated diode module is required for high-current applications. The 150 ns recovery time suits super fast recovery needs. Verify that the system can accommodate the heavy three tower package dimensions and screw mount requirements. Ensure the operating temperature range of -55°C to 150°C aligns with the application environment.
This module belongs to the MURTA400 series from GeneSiC Semiconductor, designed for high-power industrial applications. The series utilizes silicon super fast recovery technology within an isolated three tower package. The 'R' variant specifically denotes reversed lead configuration compared to standard versions, requiring careful attention during circuit board layout and assembly planning.
Public confirmed substitute part numbers are not available in the provided source material.