MURTA40060R

MURTA40060R

$113.34
  • Description:DIODE MODULE GP 600V 200A 3TOWER
  • Series:-

SKU:a2e4e3bdceff Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA40060R

Overview

The MURTA40060R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 600 V and an average forward current of 400 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 180 ns. The junction-to-case thermal resistance is 0.35 °C/W. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • High surge capability provided by the heavy three tower package design
  • Electrically isolated base plate for enhanced safety and integration
  • Not ESD sensitive for improved handling reliability

Applications

  • High power rectification in industrial converters
  • Inverter circuits requiring fast recovery characteristics
  • DC-DC conversion systems with high current demands

Procurement Notes

Verify the specific part number against official datasheets to confirm the reversed lead configuration associated with the 'R' suffix. Ensure that the thermal management solution aligns with the specified junction-to-case thermal resistance. Confirm compliance with RoHS directives and check for any regional shipping restrictions or documentation requirements before finalizing procurement orders.

Selection Notes

Select this component when applications require high average forward current combined with fast recovery speeds. The isolated base plate facilitates mounting on insulated heat sinks. Consider the 3300 A surge rating for circuits experiencing high transient currents. Verify that the system operating temperature remains within the specified -55 °C to +150 °C range for reliable performance.

Part Context

This component belongs to the MURTA400 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants with reverse voltages ranging from 600 V to 1200 V. All devices share the same heavy three tower package and electrical isolation features, differing primarily in their voltage ratings and specific terminal configurations.

Replacement Considerations

Direct replacements must match the 600 V rating, 400 A current capacity, and 180 ns recovery time. Verify pinout compatibility due to the reversed leads in the 'R' variant. Alternative modules from other manufacturers should be evaluated for equivalent thermal resistance and surge current capabilities.

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