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The GeneSiC Semiconductor MURTA500120 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 1200 V. It supports an average forward current of 500 A per package and delivers a peak forward surge current of 3800 A per leg. The device features a maximum instantaneous forward voltage of 2.6 V at 250 A and a maximum reverse recovery time of 250 ns. Thermal resistance from junction to case is 0.30 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Verify the specific suffix designation when ordering, as the datasheet indicates that devices with an "R" suffix feature reversed leads compared to standard configurations. Confirm the exact voltage rating matches the application requirements within the 600 V to 1200 V product family range. Ensure thermal interface materials are compatible with the heavy three tower package structure for optimal heat dissipation during operation.
Select this component for applications requiring robust surge handling and high voltage isolation in a compact module form factor. The low thermal resistance facilitates efficient heat transfer in high-power density designs. Consider the 250 ns reverse recovery time for switching frequency limitations. Evaluate the mechanical mounting constraints associated with the screw-mount three tower package style.
This part belongs to the MURTA500 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 600 V to 1200 V, sharing common electrical characteristics and package dimensions while differing in blocking voltage capabilities. The MURTA500120 represents the highest voltage variant in this specific lineup.
Direct replacements must match the 1200 V rating, 500 A current capacity, and identical pinout configuration. Verify that substitute modules offer comparable thermal resistance and reverse recovery times to maintain system performance without redesigning the cooling infrastructure.
The "R" suffix indicates that the terminal configuration has reversed leads compared to the standard MURTA500120 model.
No, the datasheet explicitly states that the device is not ESD sensitive.
The maximum junction and storage temperature for the MURTA500120 is +150 °C.