MURTA500120

MURTA500120

$123.44
  • Description:DIODE MOD GP 1200V 250A 3TOWER
  • Series:-

SKU:44025ac5a814 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1200V 250A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:2.6 V @ 250 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA500120

Overview

The GeneSiC Semiconductor MURTA500120 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 1200 V. It supports an average forward current of 500 A per package and delivers a peak forward surge current of 3800 A per leg. The device features a maximum instantaneous forward voltage of 2.6 V at 250 A and a maximum reverse recovery time of 250 ns. Thermal resistance from junction to case is 0.30 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

  • Heavy three tower package design providing high surge capability
  • Electrically isolated base plate for safety and thermal management
  • Not ESD sensitive for simplified handling

Applications

  • High power industrial rectification systems
  • Medium to high voltage DC-DC converters
  • Inverter and chopper circuits in motor drives

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates that devices with an "R" suffix feature reversed leads compared to standard configurations. Confirm the exact voltage rating matches the application requirements within the 600 V to 1200 V product family range. Ensure thermal interface materials are compatible with the heavy three tower package structure for optimal heat dissipation during operation.

Selection Notes

Select this component for applications requiring robust surge handling and high voltage isolation in a compact module form factor. The low thermal resistance facilitates efficient heat transfer in high-power density designs. Consider the 250 ns reverse recovery time for switching frequency limitations. Evaluate the mechanical mounting constraints associated with the screw-mount three tower package style.

Part Context

This part belongs to the MURTA500 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 600 V to 1200 V, sharing common electrical characteristics and package dimensions while differing in blocking voltage capabilities. The MURTA500120 represents the highest voltage variant in this specific lineup.

Replacement Considerations

Direct replacements must match the 1200 V rating, 500 A current capacity, and identical pinout configuration. Verify that substitute modules offer comparable thermal resistance and reverse recovery times to maintain system performance without redesigning the cooling infrastructure.

FAQ

What is the difference between the MURTA500120 and MURTA500120R?

The "R" suffix indicates that the terminal configuration has reversed leads compared to the standard MURTA500120 model.

Is the MURTA500120 sensitive to electrostatic discharge?

No, the datasheet explicitly states that the device is not ESD sensitive.

What is the maximum operating temperature for this module?

The maximum junction and storage temperature for the MURTA500120 is +150 °C.

MURTA500120MURTA500120
$123.44
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