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Product Detailed Parameters
- Description：DIODE MOD GP 1200V 250A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：250A
- Voltage - Forward (Vf) (Max) @ If：2.6 V @ 250 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURTA500120R is a silicon super fast recovery diode module featuring a heavy three tower package with an electrically isolated base plate. It offers a repetitive peak reverse voltage of 1200 V and an average forward current of 500 A per package. The device supports a peak forward surge current of 3800 A per leg and exhibits a maximum instantaneous forward voltage of 2.6 V at 250 A. Maximum reverse recovery time is 250 ns, with a junction-to-case thermal resistance of 0.30 °C/W per leg. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- High surge capability with heavy three tower package construction
- Electrically isolated base plate for enhanced safety
- Not ESD sensitive design
Applications
- Industrial power supplies
- Motor drives
- Inverter circuits
Procurement Notes
Verify the specific suffix 'R' indicates reversed leads as documented in the datasheet. Confirm the manufacturer details align with GeneSiC Semiconductor specifications. Ensure the component matches the heavy three tower package dimensions and terminal configuration provided in the official documentation before integration.
Selection Notes
Select this module for applications requiring high current handling up to 500 A and robust surge protection. The 1200 V rating suits high-voltage systems. Consider the 0.30 °C/W thermal resistance for heat sink design. Verify lead orientation requirements due to the reversed lead configuration associated with the 'R' designation.
Part Context
This component belongs to the MURTA500 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 600 V to 1200 V reverse voltage. All models share the same heavy three tower package and electrical isolation features, differing primarily in voltage ratings and specific lead configurations.
Replacement Considerations
Compatible substitutes include other models within the MURTA500 series such as MURTA50060 or MURTA500120, provided voltage ratings and current capabilities meet system requirements. Verify lead orientation compatibility when replacing 'R' suffix devices with standard versions.
