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The GeneSiC Semiconductor MURTA50020 is a silicon super fast recovery diode module designed for high-power applications. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 200 V and an average forward current of 500 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 3800 A, and a maximum reverse recovery time of 200 ns. The junction-to-case thermal resistance is 0.30 °C/W, allowing operation within a temperature range of -55 to +150 °C.
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that thermal management solutions align with the specified junction-to-case thermal resistance values. Confirm compliance with RoHS directives and check for any discontinuation notices prior to finalizing procurement plans.
Select this component when high current handling and fast switching speeds are required in isolated power modules. Evaluate the thermal performance requirements against the 0.30 °C/W junction-to-case resistance. Consider the mechanical robustness of the three tower package for screw-mount installations in demanding industrial environments.
This module belongs to the MURTA500 series, which includes variants with different reverse voltage ratings ranging from 200 V to 400 V. All devices in this series share the same 500 A average forward current rating and utilize the same heavy three tower package structure for consistent mechanical and thermal performance across the product line.
Direct replacements within the same series include the MURTA50040R, which offers a higher voltage rating of 400 V while maintaining identical current and thermal specifications. Verify pinout compatibility before substitution.