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The MURTA50060 is a silicon super fast recovery diode module from the MURTA500 series, rated for a repetitive peak reverse voltage of 600 V and an average forward current of 500 A per package. It features a heavy three tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V at 250 A, a peak forward surge current of 3800 A per leg, and a maximum reverse recovery time of 250 ns. The device operates within a junction temperature range of -55 to 150 °C.
Verify the specific suffix designation when ordering, as the datasheet indicates that devices with an 'R' suffix have reversed leads compared to standard configurations. Confirm the exact terminal configuration matches the target PCB layout or busbar connection requirements before finalizing procurement to ensure correct polarity and electrical connectivity in the final assembly.
Select this component for high-current applications requiring robust surge handling and fast recovery characteristics. Ensure the thermal management system can maintain the junction temperature within the specified operating range given the thermal resistance values. Consider the physical dimensions of the three tower package for adequate clearance and mechanical stability in the enclosure design.
This part belongs to the MURTA500 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings ranging from 600 V to 1200 V while maintaining a consistent 500 A average forward current rating across the lineup. These modules are designed for demanding power electronics environments requiring reliable performance under high stress conditions.
MURTA500120