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The GeneSiC Semiconductor MURTA600120 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 1200 V and an average forward current of 600 A. It features a heavy three tower package with an electrically isolated base plate, ensuring high surge capability and robust thermal performance. The device operates within a junction temperature range of -55 °C to +150 °C and exhibits a maximum instantaneous forward voltage of 2.6 V at 300 A.
Verify the specific suffix designation against official documentation to confirm terminal configuration, as reversed leads may apply to certain variants. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Select this component when high voltage blocking capability and significant current handling are required. Ensure the thermal management system can accommodate the specified junction-to-case thermal resistance. Verify that the application circuitry aligns with the super fast recovery time requirements for optimal efficiency.
This module belongs to the MURTA600 series, which encompasses various voltage ratings from 600 V to 1200 V. All members share the same physical footprint and mounting style, allowing for standardized mechanical design across different voltage levels within the same product family.
Direct substitutes include other models within the MURTA600 series, such as the MURTA60060 or MURTA600120R, provided the voltage and current ratings meet the circuit requirements and terminal configurations match.