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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：200 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURTA60020 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features an average forward current rating of 600 A and a repetitive peak reverse voltage of 200 V. The device utilizes a heavy three tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 4400 A, and a maximum reverse recovery time of 250 ns. The junction-to-case thermal resistance is 0.28 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Heavy three tower package design providing high surge capability
- Electrically isolated base plate for enhanced safety and mounting flexibility
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High power DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive circuits
Procurement Notes
Verify the specific part number suffix against official datasheets to confirm terminal configuration, as 'R' variants may have reversed leads. Confirm RoHS compliance status through manufacturer documentation prior to procurement. Ensure thermal management solutions match the specified junction-to-case thermal resistance requirements for reliable operation within the rated temperature range.
Selection Notes
Select this component for applications requiring high current handling and fast switching speeds. The 200 V reverse voltage rating suits low-voltage high-current topologies. Evaluate the 0.28 °C/W thermal resistance against your heatsink capabilities to maintain junction temperatures below 150 °C under full load conditions. Consider the 4400 A surge rating for inrush current protection needs.
Part Context
The MURTA60020 belongs to the MURTA600 series of silicon super fast recovery diode modules from GeneSiC Semiconductor. This series includes variants with different reverse voltage ratings up to 400 V, all sharing the same 600 A current rating and heavy three tower package structure. The series is designed for robust performance in demanding power electronics environments.
Replacement Considerations
Cross-reference with other MURTA600 series parts like MURTA60040 if higher voltage blocking is needed. Verify pinout compatibility when substituting with non-'R' versions due to potential lead reversal differences.
FAQ
What is the maximum reverse recovery time for the MURTA60020?
The maximum reverse recovery time (Trr) is 250 ns per leg.
Is the MURTA60020 sensitive to electrostatic discharge?
No, the device is not ESD sensitive according to the specifications.
What is the thermal resistance from junction to case?
The maximum thermal resistance from junction to case is 0.28 °C/W per leg.
