MV2N4093

Overview

The MV2N4093 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a zero-gate-voltage drain current of 8 mA, a continuous drain current rating of 100 pA, and an on-resistance of 80 Ohms. Power dissipation is rated at 360 mW, with an operating temperature range spanning from -65 C to +175 C.

Feature Summary

• Single N-channel JFET configuration utilizing silicon semiconductor technology
• Metal TO-18-3 hermetic package suitable for high-reliability through-hole applications
• Extended operational temperature capability ranging from -65 C to +175 C

Applications

• High-temperature analog signal processing circuits
• Low-noise amplifier stages requiring specific transconductance characteristics
• Precision current source implementations in harsh environments

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or direct manufacturer channels. Confirm the specific lot code and date code against project requirements. Ensure proper handling procedures are followed due to the through-hole metal can packaging. Request official datasheets and compliance documentation prior to final procurement decisions to ensure technical suitability.

Selection Notes

Select the MV2N4093 when a specific 8 mA zero-gate-voltage drain current is required within a 40 V breakdown voltage limit. Consider this part for designs necessitating operation up to 175 C where standard plastic packages may fail. Compare against the MV2N4091 and MX2N4092 variants if different transconductance levels or current specifications better match the circuit design goals.

Part Context

This component belongs to the Microchip Technology line of discrete JFETs, specifically designed for robust performance in demanding electronic environments. The TO-18-3 package provides mechanical stability and thermal conductivity advantages over smaller surface-mount alternatives. It serves as a specialized active element for linear applications where precise control of channel conductivity is essential for signal integrity.

Replacement Considerations

The MV2N4091 offers a higher drain current of 30 mA, while the MX2N4092 provides 15 mA. Both share identical voltage ratings and package types. Verify that the alternative current specifications align with the original circuit biasing requirements before substitution.