MV2N4093UB/TR

Overview

The MV2N4093UB/TR is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical parameters include a zero-gate-voltage drain-source current of 8 mA, a continuous drain current of 100 pA, and a drain-source on-resistance of 80 Ohms. Power dissipation is rated at 360 mW, with an operating temperature range spanning from -65 C to +175 C.

Feature Summary

• Utilizes silicon JFET technology for robust performance
• Designed for through-hole installation in a TO-18-3 metal can package
• Supports high-temperature operation up to +175 C

Applications

• High-temperature analog signal processing circuits
• Low-noise amplifier input stages
• Precision current source implementations

Procurement Notes

Verify the specific suffix UB/TR against official Microchip documentation to confirm tape-and-reel packaging and any associated functional variations. Ensure the requested part number matches the exact datasheet specifications for the MV2N4093 series before procurement. Cross-reference the manufacturer's ordering information to validate availability and compliance requirements.

Selection Notes

Select this component when a silicon N-channel JFET with a TO-18-3 package is required for through-hole applications. Consider the 8 mA zero-gate-voltage current and 80 Ohm on-resistance for circuit design compatibility. Verify that the 360 mW power dissipation and extended temperature range meet the specific environmental and thermal constraints of the target application.

Part Context

The MV2N4093UB/TR belongs to the Microchip MV2N4093 series of N-channel JFETs. This family includes variants such as the MV2N4091 and MV2N4092, which share similar voltage ratings and package types but differ in zero-gate-voltage drain current and on-resistance values. The series is characterized by silicon construction and metal can packaging suitable for demanding environments.

Replacement Considerations

Official substitutes within the same product line include the MV2N4091 and MV2N4092. These parts share identical voltage ratings and package styles but feature different zero-gate-voltage currents and on-resistances. Verify that the alternative device's electrical characteristics align with the original circuit requirements before substitution.