MV2N4093UB

Overview

The MV2N4093UB is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a single configuration with a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical parameters include a zero-gate-voltage drain current of 8 mA, a continuous drain current rating of 100 pA, and a drain-source on-resistance of 80 Ohms. The component supports a power dissipation of 360 mW and operates within a temperature range from -65°C to +175°C.

Feature Summary

• High-temperature operation capability up to 175°C using silicon technology
• Robust voltage handling with 40 V drain-source and gate-source breakdown ratings
• Metal can packaging suitable for high-reliability through-hole applications

Applications

• High-temperature analog signal processing circuits
• Low-noise amplifier stages requiring stable biasing
• Military and aerospace electronic systems

Procurement Notes

Verify the specific suffix UB against official Microchip documentation to confirm package or testing variations. Ensure compatibility with existing thermal management designs due to the TO-18-3 form factor. Confirm RoHS status as indicated in technical sheets prior to integration. Validate supply chain sources for authenticity given the specialized nature of this component.

Selection Notes

Select the MV2N4093UB when designing circuits that require stable JFET performance at elevated temperatures exceeding standard commercial limits. The 8 mA IDSS and 80 Ohm Rds(on) define the biasing requirements. Consider the TO-18-3 package constraints for PCB layout and mechanical mounting. Compare against other MV2N409x variants if different current levels are needed.

Part Context

This component belongs to the MV2N409x series of N-channel JFETs produced by Microchip Technology. These devices are engineered for rugged environments where standard silicon components may fail. The series offers consistent electrical characteristics across multiple part numbers differentiated primarily by their zero-gate-voltage drain current specifications.

Replacement Considerations

Public confirmed substitute part numbers: None identified.