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Product Detailed Parameters
- Description：JFET N-CH
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MV2N4391 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 through-hole package. The device features a single configuration with a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a maximum continuous drain current of 100 mA, a zero-gate-voltage drain current of 30 mA, and a power dissipation rating of 360 mW. It operates within a temperature range of -65°C to +175°C.
Feature Summary
- Provides high-voltage capability with 40 V drain-source and gate-source breakdown ratings for robust circuit protection.
- Operates over an extended industrial temperature range from -65°C to +175°C for demanding environments.
- Utilizes silicon JFET technology for stable performance in analog signal processing applications.
Applications
- High-voltage analog switching circuits
- Low-noise amplifier input stages
- Constant current source implementations
Procurement Notes
Verify the specific suffix codes against official Microchip documentation to ensure correct binning and electrical tolerances. Confirm RoHS compliance status as indicated in datasheets, noting that some variants may not be compliant. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and traceability before procurement.
Selection Notes
Select this component when designing circuits requiring high voltage tolerance and low leakage characteristics. Ensure the thermal management strategy accommodates the 360 mW power dissipation limit at elevated ambient temperatures. Verify that the required gate-source voltage polarity aligns with the N-channel depletion mode operation of the device.
Part Context
This component belongs to the Microchip JFET product line, specifically designed for discrete transistor applications. It serves as a fundamental active element in analog electronics, offering distinct advantages in impedance matching and signal amplification compared to standard MOSFETs in certain high-voltage scenarios.
Replacement Considerations
Consult official Microchip substitution guides for verified equivalents. Generic replacements may differ in pinout or electrical parameters; verify compatibility thoroughly before integration.
