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The MV2N4856UB is a Silicon N-Channel Junction Field Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes surface-mount technology and is housed in an SMD-3 package configuration. The device supports a continuous drain current of 175 mA with a maximum power dissipation rating of 1.8 W. Electrical characteristics include a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. The component operates within a temperature range from -65°C to +200°C.
Verify the specific suffix designation against official Microchip documentation to confirm pinout compatibility and electrical tolerances. Ensure the ordering information matches the required surface-mount package type. Confirm that the requested quantity aligns with manufacturer minimum order requirements before finalizing procurement actions.
Select this component when a surface-mount JFET with high thermal tolerance is required. The 30 V breakdown voltage suits low-voltage analog applications. Verify that the SMD-3 footprint fits the target PCB layout. Consider the 1.8 W power dissipation capability for thermal management design constraints during the selection phase.
This part belongs to the Microchip JFET product line, specifically designed for discrete transistor applications. It serves as a surface-mount alternative to through-hole variants within the same family. The device is categorized under transistors and is intended for use in general-purpose analog electronics requiring reliable field-effect switching or amplification.
Consult official substitution guides for compatible surface-mount JFETs. Verify pinout alignment and electrical parameter equivalence before replacing the original component.