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The MV2N4861 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 through-hole metal can package designed for high-reliability applications. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. It supports a continuous drain current of 50 mA with a maximum power dissipation of 360 mW. The component operates within an extended temperature range from -65°C to +175°C, ensuring stability in demanding environments.
Verify the specific suffix against official Microchip documentation to confirm exact electrical binning and testing criteria. Ensure the procurement channel provides traceability certificates required for regulated industries. Confirm that the TO-18-3 package dimensions match the target PCB footprint before finalizing orders.
Select this component when circuit designs require JFETs capable of sustained operation at elevated temperatures exceeding standard commercial limits. The TO-18-3 package offers superior thermal and mechanical robustness compared to plastic packages. Verify that the 40V breakdown ratings align with the system's maximum voltage stress conditions.
This part belongs to Microchip's legacy discrete transistor portfolio, focusing on radiation-hardened and high-reliability semiconductor solutions. The MV2N4861 variant typically denotes military or space-grade screening levels compared to commercial equivalents. It serves as a critical component for maintaining performance in harsh operational environments where standard silicon devices may fail.
Cross-reference with the 2N4861 series for pin-compatible alternatives. Verify that substitute parts meet the same -65°C to +175°C operating temperature range and TO-18-3 package constraints.