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Product Detailed Parameters
- Description：GAAS TVAR NON HERMETIC EPSM SMT
- Series：-
- Mfr：Microchip Technology
- Package：Tray
- Capacitance @ Vr, F：10pF @ 4V, 1MHz
- Capacitance Ratio：13.1
- Capacitance Ratio Condition：C2/C20
- Voltage - Peak Reverse (Max)：22 V
- Diode Type：Single
- Q @ Vr, F：1500 @ 4V, 50MHz
- Operating Temperature：-55°C ~ 175°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Chip
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Overview
The MV31026-154-4/TR is a single varactor diode manufactured by Microchip Technology, designed for surface-mount applications. It utilizes Gallium Arsenide (GaAs) technology and features an EPSM package. The device operates with a peak reverse voltage of 22 V and maintains a capacitance of 10 pF at 4 V and 1 MHz. It exhibits a high capacitance ratio of 13.1 under specified conditions. The component supports an operating temperature range from -55°C to 175°C and achieves a Q factor of 1500 at 4 V and 50 MHz.
Feature Summary
- Utilizes GaAs TVAR technology for non-hermetic surface-mount construction
- Provides high Q factor performance at specified RF frequencies
- Supports extended operating temperatures up to 175°C
Applications
- RF tuning circuits requiring variable capacitance
- Voltage-controlled oscillator designs
- Frequency modulation modules
Procurement Notes
Verify the specific ordering suffix /TR confirms tape-and-reel packaging if required by automated assembly processes. Confirm that the EPSM package dimensions align with the target PCB footprint. Ensure the 22 V peak reverse voltage rating meets the maximum bias requirements of the intended circuit application without exceeding absolute maximum ratings.
Selection Notes
Select this component when a high-Q GaAs varactor is needed for wideband RF applications. The 13.1 capacitance ratio offers significant tuning range compared to standard silicon alternatives. Consider the -55°C to 175°C range for harsh environment deployments where thermal stability is critical for consistent capacitance behavior across varying operational loads.
Part Context
This part belongs to Microchip's MV31026 series of varactor diodes. These components are engineered for high-frequency performance using GaAs material properties. The series provides options for various capacitance ratios and voltage ratings to suit different RF tuning requirements in communication and signal processing systems.
Replacement Considerations
Cross-reference with MV31026-150A/TR for similar series characteristics. Verify electrical parameters such as capacitance ratio and peak reverse voltage against the original design specifications before substitution to ensure circuit compatibility.
