MWI25-12E7

Overview

The MWI25-12E7 is a six-pack IGBT module featuring NPT3 technology and HiPerFRED diodes. It provides a collector-emitter voltage of 1200 V, with continuous collector currents of 52 A at 25°C and 36 A at 80°C case temperature. The saturation voltage is typically 1.9 V at 25°C. Thermal resistance from junction to case is 0.55 K/W per IGBT and 1.19 K/W per diode. The module includes an isolated copper base plate for PCB mounting via solderable pins.

Feature Summary

• NPT3 IGBTs offer low saturation voltage and positive temperature coefficient for easy paralleling
• HiPerFRED diodes provide fast reverse recovery and low leakage current
• Industry standard package with isolated copper base plate and solderable pins

Applications

• AC drives
• Power supplies with power factor correction

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the part number matches the official datasheet specifications exactly. Check for phase-out status as indicated in documentation. Ensure storage conditions comply with manufacturer guidelines before installation.

Selection Notes

Select this module based on its 1200 V rating and thermal characteristics for high-power switching applications. Evaluate the short circuit SOA capability and RBSOA requirements against system fault conditions. Consider the specific gate resistor values needed to optimize switching times and energy losses.

Part Context

This component belongs to the MWI series of six-pack IGBT modules manufactured by IXYS. It utilizes NPT3 technology for improved performance in resonant circuits. The module integrates both IGBTs and free-wheeling diodes in a single package for compact design.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.