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The IXYS MWI300-12E9 is a six-pack IGBT module utilizing NPT3 technology. It features a maximum collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC80) of 375 A at 80°C case temperature. The saturation voltage (VCE(sat)) ranges from 2.0 V to 2.7 V depending on junction temperature. Switching characteristics include turn-on energy (Eon) of 19 mJ and turn-off energy (Eoff) of 32 mJ at TVJ = 125°C, IC = 300 A, and VGE = ±15 V. The module includes ultra-fast free-wheeling diodes with a forward voltage (VF) of 2.1 V at IF = 300 A. Thermal resistance from junction to case (RthJC) is 0.06 K/W for the IGBTs and 0.11 K/W for the diodes.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and pin alignment before installation. Ensure thermal interface materials are compatible with the copper base plate design. Review electrical ratings against system requirements to prevent overstress conditions during operation.
Select this module for applications requiring high current handling and robust short-circuit protection. Consider the thermal resistance values when designing heatsinking solutions. Evaluate gate resistor requirements to optimize switching speed versus loss trade-offs. Verify compatibility with wave soldering processes if PCB mounting is utilized.
This component belongs to the MWI series of six-pack IGBT modules manufactured by IXYS. It utilizes NPT3 technology to achieve improved performance metrics compared to earlier generations. The module integrates both IGBTs and free-wheeling diodes in a single package for compact power conversion designs.
Public confirmed substitute part numbers are not available in the provided documentation.