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Product Detailed Parameters
- Description：IGBT MODULE 1200V 43A 160W E1
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：Trench
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 25A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：E1
- Supplier Device Package：E1
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：43 A
- Power - Max：160 W
- Current - Collector Cutoff (Max)：400 µA
- Input Capacitance (Cies) @ Vce：1.81 nF @ 25 V
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Overview
The IXYS MWI45-12T6K is a six-pack IGBT module featuring trench technology and HiPerFRED diodes. It provides a collector-emitter voltage of 1200 V with a continuous collector current of 43 A at 25°C case temperature. The typical saturation voltage is 1.9 V, and total power dissipation reaches 160 W at 25°C. The module includes an integrated NTC temperature sensor and offers short circuit safe operating area capability for 10 μs. It utilizes an industry-standard E1 package with solderable pins for PCB mounting.
Feature Summary
- Trench IGBTs provide low saturation voltage, positive temperature coefficient for easy paralleling, fast switching, and optimized performance in resonant circuits due to short tail current.
- HiPerFRED diodes deliver fast reverse recovery, low operating forward voltage, and low leakage current.
- Industry standard E1 package features solderable pins for PCB mounting and an isolated copper base plate.
Applications
- AC drives
- UPS systems
- Welding equipment
Procurement Notes
Verify the specific ordering code 500 145 against the manufacturer's latest documentation before procurement. Confirm that the delivering mode corresponds to box packaging with a base quantity of 10 units. Ensure all electrical ratings match the design requirements, particularly the isolation voltage and thermal resistance values specified in the datasheet.
Selection Notes
Select this module for applications requiring a six-pack configuration with integrated freewheeling diodes. Consider the 1200 V rating and 43 A current capacity for medium-power inverters. Evaluate the thermal management needs based on the 160 W power dissipation and junction-to-case thermal resistance. Verify compatibility with the required gate drive voltages and short-circuit withstand capabilities.
Part Context
This component belongs to the MWI series of six-pack IGBT modules from IXYS. It combines trench IGBTs with HiPerFRED diodes in a single package. The module is designed for high-efficiency power conversion applications. It features an isolated copper base plate and solderable pins for direct PCB integration.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official documentation or authorized distributors for cross-reference information regarding compatible replacements or upgrades within the IXYS portfolio.
FAQ
What is the short circuit safe operating area duration?
The module supports a non-repetitive short circuit safe operating area duration of 10 μs at a junction temperature of 125°C with a collector-emitter voltage of 900 V.
Does the module include a temperature sensor?
Yes, the module integrates an NTC temperature sensor with a typical resistance of 4.7 kΩ at 25°C and a B-value of 3510 K.
What is the maximum repetitive reverse voltage for the diodes?
The maximum repetitive reverse voltage (VRRM) for the integrated HiPerFRED diodes is 1600 V.
