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Product Detailed Parameters
- Description：JFET N-CH 40V 3UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 20V
- Resistance - RDS(On)：50 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500/431
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Overview
The MX2N4092UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a TO-18-3 hermetic metal can package designed for through-hole mounting. Key electrical specifications include a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. The device supports a maximum power dissipation of 360 mW and operates within an extended temperature range from -65°C to +175°C.
Feature Summary
- Hermetically sealed TO-18-3 metal can construction
- High-temperature silicon JFET technology
- Single N-channel configuration
Applications
- Military aerospace circuits
- High-reliability analog signal processing
- Harsh environment instrumentation
Procurement Notes
Verify the specific suffix 'UB' against the official Microchip datasheet to confirm pinout and mechanical dimensions, as suffixes often denote specific packaging or qualification standards. Ensure the procurement source provides traceability documentation required for high-reliability applications. Confirm RoHS status, as military-grade components may have different compliance classifications than commercial variants.
Selection Notes
Select this component when hermetic sealing and extreme temperature stability are critical requirements. The TO-18-3 package offers superior environmental protection compared to plastic packages. Compare the 40 V breakdown rating against circuit voltage peaks. Consider the thermal management capabilities required for the 360 mW dissipation limit in enclosed high-temperature environments.
Part Context
This part belongs to the Microchip 2N409x series of high-reliability JFETs. These devices are engineered for defense and space applications where standard commercial semiconductors fail due to radiation or thermal stress. The series shares similar electrical characteristics but varies in packaging and specific parameter tolerances defined by the manufacturer's quality control levels.
Replacement Considerations
Cross-reference with MV2N4092 for equivalent performance in non-hermetic applications. Verify that substitute parts meet the same MIL-spec or high-reliability qualification standards if used in aerospace contexts.
