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The MX2N4859UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single configuration and utilizes surface-mount technology (SMD/SMT). The device supports a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical parameters include a zero-gate-voltage drain-source current of 80 mA, an on-resistance of 60 Ohms, and a power dissipation rating of 1.8 W. The component operates within a temperature range of -65°C to +200°C.
Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm that the part number matches the exact specifications provided in official Microchip datasheets. Ensure compatibility with surface-mount assembly processes. Check for any recent Product Change Notifications regarding manufacturing updates or material changes before finalizing procurement decisions.
Select this component when a surface-mount N-channel JFET is required for high-temperature environments. The 1.8 W power dissipation rating supports moderate power handling needs. Verify that the 30 V breakdown voltage aligns with the circuit's maximum operating voltages. Consider the 60 Ohm on-resistance for impedance matching requirements in signal processing paths.
This component belongs to the Microchip JFET product line, specifically designed for discrete transistor applications. It serves as a surface-mount alternative to through-hole variants within the same family. The device is categorized under transistors and is intended for use in circuits requiring reliable field-effect transistor functionality in compact form factors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for cross-reference information if replacement is necessary.
The maximum operating temperature is +200°C.
It is a surface-mount device (SMD/SMT).
The zero-gate-voltage drain-source current is 80 mA.