MX2N4859UB/TR

MX2N4859UB/TR

$57.26
  • Description:JFET
  • Series:-

SKU:1b2f9aff5942 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MX2N4859UB/TR

Overview

The MX2N4859UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single configuration and utilizes surface-mount technology (SMD/SMT). The device supports a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical parameters include a zero-gate-voltage drain-source current of 80 mA, an on-resistance of 60 Ohms, and a power dissipation rating of 1.8 W. The component operates within a temperature range of -65°C to +200°C.

Feature Summary

  • Utilizes silicon technology for robust semiconductor performance.
  • Designed for surface-mount installation to facilitate automated assembly.
  • Capable of operating at elevated temperatures up to 200°C.

Applications

  • High-temperature electronic circuit design
  • Surface-mount transistor arrays
  • General-purpose JFET switching applications

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm that the part number matches the exact specifications provided in official Microchip datasheets. Ensure compatibility with surface-mount assembly processes. Check for any recent Product Change Notifications regarding manufacturing updates or material changes before finalizing procurement decisions.

Selection Notes

Select this component when a surface-mount N-channel JFET is required for high-temperature environments. The 1.8 W power dissipation rating supports moderate power handling needs. Verify that the 30 V breakdown voltage aligns with the circuit's maximum operating voltages. Consider the 60 Ohm on-resistance for impedance matching requirements in signal processing paths.

Part Context

This component belongs to the Microchip JFET product line, specifically designed for discrete transistor applications. It serves as a surface-mount alternative to through-hole variants within the same family. The device is categorized under transistors and is intended for use in circuits requiring reliable field-effect transistor functionality in compact form factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for cross-reference information if replacement is necessary.

FAQ

What is the maximum operating temperature for the MX2N4859UB/TR?

The maximum operating temperature is +200°C.

Is the MX2N4859UB/TR a through-hole or surface-mount device?

It is a surface-mount device (SMD/SMT).

What is the zero-gate-voltage drain-source current specification?

The zero-gate-voltage drain-source current is 80 mA.

MX2N4859UB/TRMX2N4859UB/TR
$57.26
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