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The MX2N5114UB is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a low-profile UB-4 surface mount package and operates within a temperature range of -65°C to +200°C. Key electrical parameters include a drain-source breakdown voltage of -800 mV, a gate-source breakdown voltage of 30 V, and a zero-gate-voltage drain current of -60 mA. The device features a maximum power dissipation of 500 mW and an on-resistance of 100 Ohms.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and screening level. Ensure compatibility with UB-4 footprint requirements during PCB layout. Confirm RoHS status as commercial versions may differ from military equivalents. Validate supply chain sources for authenticity given the specialized nature of high-reliability components.
Select this component when a P-Channel JFET in a low-profile surface mount package is required for high-temperature environments. Consider the specific breakdown voltage limits and on-resistance characteristics for circuit design. Verify that the UB-4 package dimensions fit the available board space. Compare against through-hole alternatives if assembly methods differ.
This part belongs to the 2N5114 through 2N5116 series of JFETs offered by Microchip Technology. These devices are designed as surface mount equivalents to legacy JEDEC registered parts. The series includes variants for both N-Channel and P-Channel configurations, catering to diverse small-signal and voltage regulation needs in rugged electronic systems.
MX2N5114
RoHS compliant versions are available for commercial grade products only.
The maximum operating temperature is +200°C.