MX2N5116

$54.89

Description：JFET P-CH 30V TO18
Series：-

SKU:34ccfd25fd50 Category: JFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V TO18
Series：-
Mfr：Microchip Technology
Package：Bulk
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：30 V
Current - Drain (Idss) @ Vds (Vgs=0)：25 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：4 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds：27pF @ 15V
Resistance - RDS(On)：175 Ohms
Power - Max：500 mW
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：Military
Qualification：MIL-PRF-19500

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MX2N5116

Overview

The MX2N5116 is a single P-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 through-hole package. The device operates in depletion mode with a maximum drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. Key electrical characteristics include a gate-source cutoff voltage of 4 V, an on-resistance of 175 ohms, and a power dissipation rating of 500 mW.

Feature Summary

Single P-channel JFET configuration for signal processing
Silicon-based construction for reliable performance
Through-hole mounting capability via TO-18-3 package

Applications

Low noise amplifier circuits
High impedance switching applications
Analog signal routing

Procurement Notes

Verify the specific manufacturer part number against official Microchip Technology documentation to ensure authenticity. Confirm that the TO-18-3 package style matches your board layout requirements. Check for RoHS compliance status as indicated in current datasheets, noting that older variants may differ. Ensure the component meets the required operating temperature range for your specific design environment before finalizing procurement.

Selection Notes

Select this component when a P-channel JFET with a 30 V breakdown voltage and low input capacitance is required. The TO-18-3 package is suitable for through-hole assembly processes. Consider the 175 ohm on-resistance and 500 mW power dissipation limits to ensure the device operates within safe thermal and electrical boundaries for your specific circuit application.

Part Context

This component belongs to the Microchip Technology JFET product line, designed for analog signal handling. It serves as a discrete semiconductor solution for amplification and switching tasks. The device is distinct from MOSFETs due to its junction gate structure and depletion-mode operation characteristics.