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NC1D120C10ATNG is listed in the Single Diodes range at ChipApex. The manufacturer field lists NovuSem. Its product description is DIODE SIL CARB 1200V 10A TO220L. Review the specifications below when checking this part for your BOM.
Single Diodes specifications for NC1D120C10ATNG
- Description：DIODE SIL CARB 1200V 10A TO220L
- Series：NC1D
- Mfr：NovuSem
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.6 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：35 µA @ 1200 V
- Capacitance @ Vr, F：670pF @ 0.1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2L
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Single Diodes datasheet and documents for NC1D120C10ATNG
Single Diodes Overview
The NC1D120C10ATNG is a Silicon Carbide Enhanced Junction Barrier Schottky diode in a TO-220-2L package. It features a 1200V repetitive peak reverse voltage and a 10A continuous forward current at 160°C case temperature. The device supports an operating junction temperature up to 175°C. Key electrical parameters include a maximum forward voltage of 1.6V at 25°C and 35µA reverse current at 25°C. It offers high surge current capability, low leakage, and zero reverse recovery charge.
Single Diodes Feature Summary
- Enhanced Junction Barrier Schottky structure combining PiN and SBD for low leakage and low forward voltage
- Temperature-independent switching behavior with positive temperature coefficient
- High surge current capability comparable to MPS structures
- RoHS III compliant and halogen-free construction
Single Diodes Applications
- PV Inverters
- Charging Piles
- Energy Storage Systems
- Industrial Power Supply
- Automotive Electronics
Single Diodes Procurement Notes
Verify the component matches the specified NC1D120C10ATNG part code and revision A3 datasheet. Confirm the TO-220-2L package type and industrial grade classification. Ensure compliance requirements align with RoHS III standards. Validate that the supplier provides original manufacturer documentation from NovuSem or authorized distributors.
Single Diodes Selection Notes
Select this component for high-efficiency power conversion applications requiring robust thermal performance. The 175°C junction temperature rating allows for operation in demanding environments. The low forward voltage drop contributes to reduced system losses. Consider the TO-220-2L package for standard through-hole mounting solutions.
Single Diodes Part Context
This device belongs to the NovuSem NC1D series of Silicon Carbide Schottky diodes. It utilizes an Enhanced Junction Barrier Schottky technology to optimize performance between leakage current and forward voltage. The series is designed for industrial-grade reliability and cost-effective implementation in modern power electronics systems.
Single Diodes Replacement Considerations
Cross-reference part number NC1D120C10AT is listed as the original manufacturer part number. Verify pinout compatibility and thermal resistance specifications when substituting with other SiC diodes.
Single Diodes FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does this diode exhibit reverse recovery current?
No, the device features no reverse recovery current due to its Schottky barrier structure.
What is the packaging format?
The component is supplied in a tube.
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