NC1M120C12HTNG

$84.90

Description：SiC MOSFET N 1200V 12mohm 214A
Series：NC1M
Mfr：NovuSem
Package：Tube

SKU:df68e669ab25 Category: Single FETs, MOSFETs Brand: NovuSem

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Product introduction

NC1M120C12HTNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOSFET N 1200V 12mohm 214A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NC1M120C12HTNG

Description：SiC MOSFET N 1200V 12mohm 214A
Series：NC1M
Mfr：NovuSem
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：214A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：20mOhm @ 100A, 20V
Vgs(th) (Max) @ Id：3.5V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：8330 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：938W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for NC1M120C12HTNG

NC1M120C12HTNG

Single FETs, MOSFETs Overview

The NC1M120C12HTNG is a Silicon Carbide (SiC) MOSFET from the NovuSem NC1M series, housed in a TO-247-4L package. It features an N-channel configuration with a Drain-Source Voltage (VDS) of 1200V and a continuous drain current (ID) of 214A at 25°C. The device has a typical Drain-Source On-State Resistance (RDS(ON)) of 12mΩ at VGS=20V and ID=100A. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Low switching loss and short-circuit capability exceeding 3µs
High avalanche ruggedness and fast intrinsic diode with low reverse recovery charge
High blocking voltage combined with low on-resistance for improved efficiency
RoHS/RoHS III/REACH compliant and halogen-free construction

Single FETs, MOSFETs Applications

Photovoltaic (PV) inverters
Charging piles
Energy storage systems
Industrial power supplies
Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking line for the initial part code against official documentation. Confirm compliance status regarding RoHS III and REACH requirements before final integration. Ensure thermal management aligns with the specified junction-to-case resistance values. Review the latest specification sheet for any parametric updates prior to design finalization.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring reduced passive component sizes due to fast switching characteristics. Evaluate thermal performance based on the 0.16°C/W junction-to-case resistance under appropriate cooling conditions. Consider the 12mΩ on-state resistance for conduction loss calculations at target operating currents and temperatures.

Single FETs, MOSFETs Part Context

This device belongs to the NovuSem NC1M series, representing Gen 1 Industrial Grade Silicon Carbide MOSFETs. The series is designed to drastically lower both static and dynamic losses compared to traditional silicon devices. The specific model utilizes a TO-247-4L case code 'H' and tube packaging 'T'.

Single FETs, MOSFETs Replacement Considerations

Cross-reference data indicates compatibility with the original manufacturer part number NC1M120C12HT. Verify pinout alignment and electrical parameters when substituting with other 1200V SiC MOSFETs in the TO-247-4L package.