NC1M120C75GTNG

$12.57

Description：SiC MOSFET N 1200V 75mohm 47A 3
Series：NC1M
Mfr：NovuSem
Package：Tube

SKU:9b01fdd5c0ba Category: Single FETs, MOSFETs Brand: NovuSem

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Product introduction

NC1M120C75GTNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOSFET N 1200V 75mohm 47A 3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NC1M120C75GTNG

Description：SiC MOSFET N 1200V 75mohm 47A 3
Series：NC1M
Mfr：NovuSem
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：75mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：2.8V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1450 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：288W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3L
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for NC1M120C75GTNG

NC1M120C75GTNG

Single FETs, MOSFETs Overview

The NC1M120C75GTNG is a Silicon Carbide (SiC) MOSFET from the NovuSem NC1M series, housed in a TO-247-3L package. It features an N-channel configuration with a Drain-Source Voltage (VDS) of 1200V and a continuous drain current (ID) of 47A at 25°C. The device has a typical Drain-Source On-State Resistance (RDS(ON)) of 75mΩ. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Low switching loss for improved efficiency
Short-circuit capability exceeding 3 microseconds
High avalanche ruggedness
Fast intrinsic diode with low reverse recovery charge

Single FETs, MOSFETs Applications

PV Inverters
Charging Piles
Energy Storage Systems
Industrial Power Supply
Industrial Motors

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking markings against the specification sheet. Confirm RoHS/RoHS III compliance status. Ensure thermal management meets the specified junction temperature limits. Validate packaging type matches procurement requirements.

Single FETs, MOSFETs Selection Notes

Select based on voltage rating and current handling capabilities. Consider thermal resistance characteristics for heat dissipation design. Evaluate gate charge parameters for driver compatibility. Verify package dimensions fit the intended PCB layout.

Single FETs, MOSFETs Part Context

This component belongs to the NovuSem NC1M series of industrial-grade Silicon Carbide MOSFETs. The series aims to lower static and dynamic losses compared to traditional silicon devices. It supports higher frequency applications to reduce system component size.