NC1M120C75HTNG

$12.57

Description：SiC MOSFET N 1200V 75mohm 47A 4
Series：NC1M
Mfr：NovuSem
Package：Tube

SKU:369dcbec6926 Category: Single FETs, MOSFETs Brand: NovuSem

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Product introduction

NC1M120C75HTNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOSFET N 1200V 75mohm 47A 4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NC1M120C75HTNG

Description：SiC MOSFET N 1200V 75mohm 47A 4
Series：NC1M
Mfr：NovuSem
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：75mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：2.8V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1450 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：288W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for NC1M120C75HTNG

NC1M120C75HTNG

Single FETs, MOSFETs Overview

The NC1M120C75HTNG is a Silicon Carbide (SiC) MOSFET from the NC1M series, manufactured by NovuSem. It features an N-channel configuration in a TO-247-4L package. Key electrical parameters include a Drain-Source Voltage (VDS) of 1200V and a Continuous Drain Current (ID) of 47A at 25°C. The Drain-Source On-State Resistance (RDS(ON)) is specified as 75mΩ at VGS=20V and ID=20A. The device supports an operating junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Low switching loss for improved efficiency
Short-circuit capability exceeding 3 microseconds
High avalanche ruggedness
Fast intrinsic diode with low reverse recovery charge

Single FETs, MOSFETs Applications

Photovoltaic inverters
Charging piles
Energy storage systems
Industrial power supplies
Industrial motors

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as documentation references NextGen Components, Inc., while the part code indicates NovuSem. Confirm compliance with RoHS III and REACH directives. Ensure the specific ordering suffix matches the required package type and parametric tolerances before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring reduced system component size. Evaluate thermal management requirements given the 288W power dissipation rating. Consider the 1200V blocking voltage and 75mΩ on-resistance for matching circuit design needs.

Single FETs, MOSFETs Part Context

This SiC MOSFET belongs to the NC1M industrial grade series designed to lower static and dynamic losses. It utilizes a TO-247-4L package with tin-plated metal surfaces. The product is compliant with EU RoHS Directive (EU) 2015/863 EC.